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V15P45-M3, V15P45HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier...
www.vishay.com
V15P45-M3, V15P45HM3
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.31 V at IF = 5 A
TMBS® eSMP® Series
K
1 2
TO-277A (SMPC)
K Cathode
Anode 1 Anode 2
FEATURES
Very low profile - typical height of 1.1 mm
Available
Ideal for automated placement
Trench MOS Schottky technology
Low forward
voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low
voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VRRM
45 V
IFSM VF at IF = 15 A
TJ max.
210 A 0.42 V 150 °C
Package
TO-277A (SMPC)
Diode variations
Single die
MECHAN...