www.vishay.com
V1P6
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® eSMP® Seri...
www.vishay.com
V1P6
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
TMBS® eSMP® Series
Top View
Bottom View
MicroSMP (DO-219AD)
Anode
Cathode
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM
1.0 A 60 V 25 A
VF at IF = 1.0 A (125 °C)
0.45 V
TJ max. Package
150 °C MicroSMP (DO-219AD)
Circuit configuration
Single
FEATURES
Very low profile - typical height of 0.65 mm
Available
Ideal for automated placement
Trench MOS Schottky technology
Low forward
voltage drop
Low power loss, high efficiency
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low
voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection ap...