V1PM12

www.vishay.com V1PM12 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® eSMP® Series Top View Bottom View MicroSMP (DO-219AD) Anode Cathode DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 1.0 A 120 V 25 A VF at IF = 1.0 A (125 °C) 0.61 V TJ max. Package 175 °C MicroSMP (DO-219AD) Circuit configuration Single FEATURES Very low profile - typical height of 0.65 mm Available Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop Low power loss, high efficiency Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection...