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V20DL45-M3, V20DL45HM3
Vishay General Semiconductor
Low-Voltage Trench MOS Barrier Schottky Rectifier
U...
www.vishay.com
V20DL45-M3, V20DL45HM3
Vishay General Semiconductor
Low-
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.31 V at IF = 5 A
TMBS® eSMP® Series TO-263AC (SMPD)
K
1 2 Top View
PIN 1 PIN 2
Bottom View
K HEATSINK
FEATURES Trench MOS Schottky technology Very low profile - typical height of 1.7 mm
Ideal for automated placement Low forward
voltage drop, low power losses High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
AEC-Q101 qualified available - Automotive ordering code; base P/NHM3
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
45 V
IFSM VF at IF = 20 A (TA = 125 °C)
TJ max.
160 A 0.50 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse batt...