www.vishay.com
V20PW12C
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Scho...
www.vishay.com
V20PW12C
Vishay General Semiconductor
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.56 V at IF = 5 A
eSMP® Series
1
2 SlimDPAK (TO-252AE)
PIN 1 PIN 2
K HEATSINK
K
FEATURES
Very low profile - typical height of 1.3 mm Trench MOS Schottky technology Ideal for automated placement Low forward
voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
TYPICAL APPLICATIONS
For use in low
voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
120 V
IFSM
150 A
VF at IF = 10 A (TA = 125 °C)
0.66 V
TJ max.
150 °C
Package
SlimDPAK (TO-252AE)
Circuit configuration
Common cathode
MECHANICAL DATA
Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20PW12C
Device marking code
V20P...