V20WL45-M3

www.vishay.com V20WL45-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.30 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V20WL45 NC K A HEATSINK FEATURES Trench MOS Schottky technology Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM VF at IF = 20 A (TA = 125 °C) 180 A 0.48 V TJ max. Package 150 °C TO-252 (D-PAK) Diode variation Single die MECHANICAL DATA Case: TO-252 (D-PAK) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load VRRM IF(AV) IFSM Operating junction and storage temperature range TJ, TSTG V20WL45 45 20 180 -40 to +150 UNIT V A A °C Revision: 04-...