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V30120C Datasheet

Part Number V30120C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120C Datasheet (PDF)

www.vishay.com V30120C, VI30120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see .

  V30120C   V30120C






Part Number V30120SG
Manufacturers Vishay
Logo Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120SG Datasheet (PDF)

www.DataSheet.co.kr New Product V30120SG, VF30120SG, VB30120SG, VI30120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V30120SG PIN 1 PIN 2 CASE 3 1 VF30120SG PIN 1 PIN 2 2 3 1 • Solder bath te.

  V30120C   V30120C







Part Number V30120S
Manufacturers Vishay
Logo Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120S Datasheet (PDF)

www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compli.

  V30120C   V30120C







Part Number V30120S
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120S Datasheet (PDF)

www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120S 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120S 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: For definitions of compli.

  V30120C   V30120C







Part Number V30120CI
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120CI Datasheet (PDF)

www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in h.

  V30120C   V30120C







Part Number V30120C-E3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V30120C DatasheetV30120C-E3 Datasheet (PDF)

V30120C-E3, VF30120C-E3, VB30120C-E3, VI30120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V30120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VF30120C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (f.

  V30120C   V30120C







Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30120C, VI30120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30120C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30120C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 15 A 120 V 150 A VF at IF = 15 A 0.68 V TJ max. Package 150 °C TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-com.


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