www.vishay.com
V30M120C, VI30M120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifie...
www.vishay.com
V30M120C, VI30M120C
Vishay General Semiconductor
Dual High-
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
3 2 1
V30M120C
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI30M120C
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package
2 x 15 A 120 V 150 A 0.68 V 175 °C
TO-220AB, TO-262AA
Diode variations
Dual common cathode
FEATURES Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N...
