V3PAN50

www.vishay.com V3PAN50 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-221BC (SMPA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A (TA = 125 °C) TJ max. Package 3.0 A 50 V 80 A 0.40 V 150 °C DO-221BC (SMPA) Diode variation Single die FEATURES Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-221BC (SMPA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current Maximum DC reverse voltage Peak forward surge current 10 ms single half sine-wave superimposed on rated load VRRM IF (1) VDC IFSM Operating junction and storage temperature range TJ, TSTG Note (1) Free air,...