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V40100K

Vishay

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO...


Vishay

V40100K

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Description
www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package 2 x 20 A 100 V 250 A 0.63 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES 150 °C high performance Schottky diode Very low forward voltage drop Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche capability Negligible switching losses Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, DC/DC system and increased power density systems. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Marking: V40100K Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectifeid current (fig. 1) total device per diode Peak forward surge current 8.3 ms single half sine-wave  superimpos...




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