www.vishay.com
V40100K
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO...
www.vishay.com
V40100K
Vishay General Semiconductor
Dual High-
Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-220AB
PIN 1 PIN 3
3 2 1
PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package
2 x 20 A 100 V 250 A 0.63 V 150 °C
TO-220AB
Diode variation
Dual common cathode
FEATURES 150 °C high performance Schottky diode Very low forward
voltage drop Optimized VF vs. IR trade off for high efficiency Increased ruggedness for reverse avalanche
capability Negligible switching losses Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, high efficiency SMPS, output rectification, freewheeling, reverse battery protection, DC/DC system and increased power density systems.
MECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Marking: V40100K Polarity: As marked Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
voltage
Maximum average forward rectifeid current (fig. 1)
total device per diode
Peak forward surge current 8.3 ms single half sine-wave superimpos...