Part Number | V600 |
Manufacturer | Omron |
Title | RFID System Applications |
Description | www..com Solutions with the Intelligent Flag Series On-site Problem 1 On a production site that uses mechanical flags for discriminati... |
Features |
ctive-coupling method ensuring precise data communications without being affected by on-site dust, powder, or soil, thus making it possible to construct an optimum, environmentresistive system according to the onsite requirements.
There are various on-site problems awaiting solutions, such as impro... |
Datasheet | V600 pdf datasheet |
Part Number | V60MLA1210 |
Manufacturer | Littelfuse |
Title | Multilayer Transient Voltage Surge Suppressors |
Description | . |
Features |
. |
Datasheet | V60MLA1210 pdf datasheet |
Part Number | V60M120CHM3 |
Manufacturer | Vishay |
Title | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
Description | www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43. |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in . |
Datasheet | V60M120CHM3 pdf datasheet |
Part Number | V60M120C-M3 |
Manufacturer | Vishay |
Title | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
Description | www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43. |
Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in . |
Datasheet | V60M120C-M3 pdf datasheet |
Part Number | V60DM60C |
Manufacturer | Vishay |
Title | Trench MOS Barrier Schottky Rectifier |
Description | www.vishay.com V60DM60C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF . |
Features |
• Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - A. |
Datasheet | V60DM60C pdf datasheet |
Part Number | V60DM45C |
Manufacturer | Vishay |
Title | Trench MOS Barrier Schottky Rectifier |
Description | www.vishay.com V60DM45C Vishay General Semiconductor Dual Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF . |
Features |
• Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - A. |
Datasheet | V60DM45C pdf datasheet |
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