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VB40100G

Vishay Siliconix

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage ...


Vishay Siliconix

VB40100G

File Download Download VB40100G Datasheet


Description
New Product V40100G, VF40100G, VB40100G & VI40100G www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance 2 V40100G PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100G PIN 1 PIN 3 PIN 2 2 3 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1 VB40100G PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum VI40100G PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 200 A 0.67 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device p...




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