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VB60 Datasheet

Part Number VB60
Manufacturers Micro Quality Semiconductor
Logo Micro Quality Semiconductor
Description (VB Series) High Voltage Diffused Rectifiers
Datasheet VB60 DatasheetVB60 Datasheet (PDF)

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  VB60   VB60






Part Number VB60170G-E3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB60 DatasheetVB60170G-E3 Datasheet (PDF)

www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB60170G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 170 V 210 A 0.72 V 175 °C D2PAK (TO-263AB) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Low f.

  VB60   VB60







Part Number VB60170G
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB60 DatasheetVB60170G Datasheet (PDF)

www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VB60170G PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS Fo.

  VB60   VB60







Part Number VB60120C
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB60 DatasheetVB60120C Datasheet (PDF)

www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.71 V 150 °C TO-220AB, D2PAK (TO-263AB) Circuit configurati.

  VB60   VB60







Part Number VB60100C-M3
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB60 DatasheetVB60100C-M3 Datasheet (PDF)

www.vishay.com VB60100C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VB60100C PIN 1 K PIN 2 HEATS.

  VB60   VB60







Part Number VB60100C
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB60 DatasheetVB60100C Datasheet (PDF)

www.vishay.com VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB60100C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM VF at IF = 30 A TJ max. Package 320 A 0.66 V 150 °C D2PAK (TO-263AB) Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Low .

  VB60   VB60







(VB Series) High Voltage Diffused Rectifiers

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2006-06-08 : P60NF06    XM105J    TC140    TC140Gxx    TC140G    QEDS-9700    TLE4201S1    TLE4201    DQ8020    DQ80C03   


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