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VDI50-06P1

IXYS

IGBT Modules

VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Pr...


IXYS

VDI50-06P1

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VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO A1 S18 IJK 10 VII L9 X13 E2 NTC K10 X15 X16 GH10 OP9 VID X15 L9 NTC X16 F1 SV18 IK10 IC25 = 42.5 A VCES = 600 V V =CE(sat) typ. 2.4 V VDI X15 L9 NTC X16 T16 AC1 B3 Pin arangement see outlines IK10 PS18 AC1 VX18 LMNNot for new design 9 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive 42.5 29 60 VCES 10 A A A µs TC = 25°C 130 W Symbol Conditions Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.4 2.9 VGE(th) IC = 0.7 mA; VGE = VCE 4.5 I CES V =V ; CE CES V = 0 V; GE TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) t f Eon E off Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 Ω 50 50 270 40 1.4 1.0 Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 16 RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) 1.92 IXYS reserves the right to change limits, test conditions and dimensions. 2.9 V V 6.5 V 0.6 mA 1.7 mA 100 nA ns ns ns ns mJ mJ nF 0.96 K/W K/W © 2006 IXYS All rights reserved Features NPT IGBT's - positive temperature ...




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