www.vishay.com
VF20150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF =...
www.vishay.com
VF20150S
Vishay General Semiconductor
High-
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
TMBS ®
ITO-220AB
123 VF20150S
PIN 1
PIN 2
PIN 3
FEATURES Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM IFSM VF at IF = 20 A
150 V 160 A 0.75 V
TJ max.
150 °C
Package
ITO-220AB
Diode variation
Single die
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse
voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
VRRM IF(AV)
IFSM
Voltage rate of change (rated VR) Isolation
voltage from termal to heatsink t = 1 min
dV/dt VAC
Operating junction and storage ...