www.DataSheet.co.kr
New Product
VFT1080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low...
www.DataSheet.co.kr
New Product
VFT1080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TMBS ®
ITO-220AB
FEATURES
Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
3
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition
1 VFT1080S
PIN 1 PIN 2
2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PIN 3
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 80 V 100 A 0.60 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse
voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Voltage rate of change (rated VR) Isolation
voltage from termal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM dV/dt VAC T...