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VI30100C Datasheet

Part Number VI30100C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI30100C DatasheetVI30100C Datasheet (PDF)

  VI30100C   VI30100C
www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen.






Part Number VI30100SG
Manufacturers Vishay
Logo Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI30100C DatasheetVI30100SG Datasheet (PDF)

  VI30100C   VI30100C
www.DataSheet.co.kr New Product V30100SG, VF30100SG, VB30100SG & VI30100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 V30100SG PIN 1 PIN 2 CASE 3 1 VF30100SG PIN 1 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS PIN 3 PIN 3 TO-263AB K K T.






Part Number VI30100S-E3
Manufacturers Vishay
Logo Vishay
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI30100C DatasheetVI30100S-E3 Datasheet (PDF)

  VI30100C   VI30100C
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Part Number VI30100S
Manufacturers Vishay
Logo Vishay
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI30100C DatasheetVI30100S Datasheet (PDF)

  VI30100C   VI30100C
www.vishay.com V30100S, VI30100S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30100S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 100 V 250 A 0.69 V 150 °C TO-220AB, TO-262AA Diode variations Single die FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYP.






Part Number VI30100C-E3
Manufacturers Vishay
Logo Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VI30100C DatasheetVI30100C-E3 Datasheet (PDF)

  VI30100C   VI30100C
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF30100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for d.






Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load .



2012-02-02 : TSHG5210    TSHG5410    TSHG5510    TSHG6210    TSHG6410    TSHG8200    TSHG8400    U3D    UB8BT    UB8CT   


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