VI30100C Datasheet
Part Number |
VI30100C |
Manufacturers |
Vishay |
Logo |
|
Description |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
VI30100C Datasheet (PDF) |
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI30100C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM IFSM
100 V 160 A
VF at IF = 15 A
0.63 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen.
Part Number |
VI30100SG |
Manufacturers |
Vishay |
Logo |
|
Description |
High-Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
VI30100SG Datasheet (PDF) |
www.DataSheet.co.kr
New Product
V30100SG, VF30100SG, VB30100SG & VI30100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.437 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance
2 V30100SG
PIN 1 PIN 2 CASE
3 1 VF30100SG
PIN 1 PIN 2
2
3
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS
PIN 3
PIN 3
TO-263AB K K
T.
Part Number |
VI30100S-E3 |
Manufacturers |
Vishay |
Logo |
|
Description |
High Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
VI30100S-E3 Datasheet (PDF) |
.
Part Number |
VI30100S |
Manufacturers |
Vishay |
Logo |
|
Description |
High-Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
VI30100S Datasheet (PDF) |
www.vishay.com
V30100S, VI30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30100S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI30100S
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
30 A 100 V 250 A 0.69 V 150 °C TO-220AB, TO-262AA
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYP.
Part Number |
VI30100C-E3 |
Manufacturers |
Vishay |
Logo |
|
Description |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
Datasheet |
VI30100C-E3 Datasheet (PDF) |
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
ITO-220AB
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF30100C
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: for d.
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com
V30100C, VI30100C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.455 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA K
V30100C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VI30100C
3 2 1
PIN 1
PIN 2
PIN 3
K
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM IFSM
100 V 160 A
VF at IF = 15 A
0.63 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load .
2012-02-02 : TSHG5210 TSHG5410 TSHG5510 TSHG6210 TSHG6410 TSHG8200 TSHG8400 U3D UB8BT UB8CT