VI30100C

www.vishay.com V30100C, VI30100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB TMBS ® TO-262AA K V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VI30100C 3 2 1 PIN 1 PIN 2 PIN 3 K FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 160 A VF at IF = 15 A 0.63 V TJ max. 150 °C Package TO-220AB, TO-262AA Diode variation Common cathode MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Max. average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load ...