IGBT. VKI50-12P1 Datasheet

VKI50-12P1 Datasheet PDF


VKI50-12P1
VKI 50-12P1
IGBT Modules in ECO-PAC 2
H-Bridge configuration
Short Circuit SOA Capability
Square RBSOA
IC25 = 49 A
VCES
= 1200 V
VCE(sat) typ. = 3.1 V
Preliminary data sheet
F10
P18
NTC
N9
A1
A4
D4
L9
O7
S18
K10
K13
H13
X18
T16
B3
Pin arangement see outlines
IGBTs
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
± 20
V
V
TC = 25°C
TC = 80°C
VGE = ±15 V; RG = 47 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 47 ; TVJ = 125°C
non-repetitive
49
33
50
VCES
10
A
A
A
µs
TC = 25°C
208 W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.1
3.5
V
GE(th)
I = 1 mA; V = V
C GE CE
4.5
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES VCE = 0 V; VGE = ± 20 V
td(on)
t
r
td(off)
t
f
Eon
Eoff
Inductive load, TVJ = 125°C
V = 600 V; I = 30 A
CE C
VGE = 15/0 V; RG = 47
100
70
500
70
4.6
3.4
C V = 25 V; V = 0 V; f = 1 MHz
ies CE GE
1.65
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
1.2
IXYS reserves the right to change limits, test conditions and dimensions.
3.7 V
V
6.5 V
1.1 mA
4.2 mA
180 nA
ns
ns
ns
ns
mJ
mJ
nF
0.6 K/W
K/W
© 2002 IXYS All rights reserved
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
1-4


Part VKI50-12P1
Description IGBT
Feature VKI50-12P1; VKI 50-12P1 IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RB.
Manufacture IXYS
Datasheet
Download VKI50-12P1 Datasheet


VKI 50-12P1 IGBT Modules in ECO-PAC 2 H-Bridge configuratio VKI50-12P1 Datasheet





VKI50-12P1
VKI 50-12P1
Reverse diodes (FRED)
Symbol
Conditions
IF25 TC = 25°C
IF80 TC = 80°C
Maximum Ratings
49 A
31 A
Symbol
Conditions
VF
I
RM
trr
RthJC
R
thJH
IF = 30 A; TVJ = 25°C
TVJ = 125°C
I
F
=
30
A;
di /dt
F
=
500
A/µs;
TVJ
=
125°C
VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
Conditions
R25
B
25/50
T = 25°C
Characteristic Values
min. typ. max.
2.4 2.7 V
1.77 V
27 A
150 ns
1.3 K/W
2.6 K/W
Characteristic Values
min. typ. max.
455 470
3474
485 k
K
Module
Symbol
TVJ
Tstg
V
ISOL
Md
a
Conditions
I
ISOL
1
mA;
50/60
Hz
mounting torque (M4)
Max. allowable acceleration
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s2
Symbol
dS
dA
Weight
Conditions
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
Dimensions in mm (1 mm = 0.0394")
B3
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
2-4



VKI50-12P1
VKI 50-12P1
80
A
IC 60
40
20
VGE = 17 V
15 V
13 V
11V
TVJ = 25°C
9V
0 42T120
0 1 2 3 4 5 6 V7
VCE
Fig. 1 Typ. output characteristics
80
A
IC 60
40
VGE = 17V
15V
13V
11V
20 9V
TVJ = 125°C
0 42T120
0 1 2 3 4 5 6 V7
VCE
Fig. 2 Typ. output characteristics
B3
80
A
60
IC
40
VCE = 20V
20
TVJ = 125°C
0
468
TVJ = 25°C
10 12
VGE
42T120
14 V 16
Fig. 3 Typ. transfer characteristics
50
IF 4A0
30
20
TVJ = 125°C
TVJ = 25°C
10
0 42T120
0 1 2 3V4
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
15
VGE
10
5
0
0
VCE = 600V
IC = 25A
42T120
40 80 120 nC 160
QG
50
4A0
IRM
30
trr
200
1n6s0 trr
120
20
TVJ = 125°C
VR = 600 V
80
IF = 15 A
10 40
IRM
0 042T120
0 200 400 600 8A00/µs 1000
-di/dt
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
3-4




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