VNS3NV04D-E
OMNIFET II fully autoprotected Power MOSFET
Features
Max On-State resistance (per ch.) RON 120m
Current ...
VNS3NV04D-E
OMNIFET II fully autoprotected Power
MOSFET
Features
Max On-State resistance (per ch.) RON 120m
Current limitation (typ)
)Drain-Source clamp
voltage
ILIMH VCLAMP
3.5A 40V
uct(s■ Linear current limitation rod■ Thermal shut down P■ Short circuit protection te■ Integrated clamp le■ Low current drawn from input pin so■ Diagnostic feedback through input pin b■ Esd protection - O■ Direct access to the gate of the power
mosfet )(analog driving) roduct(s■ Compatible with standard power
mosfet
SO-8
Description
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power
MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and over
voltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the
voltage at the...