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VS-CPV364M4FPbF Datasheet

Part Number VS-CPV364M4FPbF
Manufacturers Vishay
Logo Vishay
Description IGBT SIP
Datasheet VS-CPV364M4FPbF DatasheetVS-CPV364M4FPbF Datasheet (PDF)

www.vishay.com VS-CPV364M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (4.6 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 18 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C Speed 1.35 V 1 kHz to 8 kHz Package SIP Circuit configuration Three phase inverter FEATURES • Fully isolated printed circuit board mount.

  VS-CPV364M4FPbF   VS-CPV364M4FPbF






IGBT SIP

www.vishay.com VS-CPV364M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE VCES IRMS per phase (4.6 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 18 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 15 A, 25 °C Speed 1.35 V 1 kHz to 8 kHz Package SIP Circuit configuration Three phase inverter FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes • Optimized for medium speed, see fig. 1 for current vs. frequency curve • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current, each IGBT IC.


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