www.vishay.com
VS-CPV364M4FPbF
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
IMS-2
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
VCES IRMS per phase (4.6 kW total)
with TC = 90 °C TJ
Supply voltage
Power factor
600 V
18 ARMS
125 °C 360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical) at IC = 15 A, 25 °C
Speed
1.35 V 1 kHz to 8 kHz
Package
SIP
Circuit configuration
Three phase inverter
FEATURES
• Fully isolated printed circuit board mount.
IGBT SIP
www.vishay.com
VS-CPV364M4FPbF
Vishay Semiconductors
IGBT SIP Module (Fast IGBT)
IMS-2
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
VCES IRMS per phase (4.6 kW total)
with TC = 90 °C TJ
Supply voltage
Power factor
600 V
18 ARMS
125 °C 360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical) at IC = 15 A, 25 °C
Speed
1.35 V 1 kHz to 8 kHz
Package
SIP
Circuit configuration
Three phase inverter
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current, each IGBT
IC.