VS-GT180DA120U

www.vishay.com VS-GT180DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 180 A SOT-227 PRIMARY CHARACTERISTICS VCES IC(DC) VCE(on) typical at 100 A, 25 °C IF(DC) Speed 1200 V 185 A at 90 °C 1.55 V 32 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES 1200 V trench and field stop technology Low switching losses Positive temperature coefficient Easy paralleling Square RBSOA 10 μs short circuit capability HEXFRED® antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 °C Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Very low VCE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current Clamped inductive load current Gate to emitter voltage ICM ILM VGE Diode continuous forward current IF Single pulse forward current IFSM Power dissipation, IGBT PD Power dissipation, diode Isolation voltage PD VISOL TEST CONDITIONS TC = 25 °C TC = 90 °C TC ...