VS-GT300YH120N

www.vishay.com VS-GT300YH120N Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology PRIMARY CHARACTERISTICS IGBT VCES 1200 V VCE(on) (typical) at 300 A, 25 °C 1.93 V ID(DC) at TC = 80 °C 300 A HEXFRED® SERIES DIODE VR 1200 V VF (typical) at 300 A, 25 °C 1.99 V IF(DC) at 80 °C 300 A IGBT AND HEXFRED® SERIES DIODE VCE(on) + VF typical at 300 A 3.92 V HEXFRED® ANTIPARALLEL DIODE VF (typical) at 10 A, 25 °C IF(DC) at 88 °C Package 1.6 V 40 A Dual INT-A-PAK FEATURES 1200 V IGBT trench and field stop technology with positive temperature coefficient Low switching losses Maximum junction temperature 175 °C 10 μs short circuit capability Low inductance case HEXFRED® antiparallel and series diodes with soft reverse recovery Isolated copper baseplate using DCB (Direct Copper Bonding) technology Speed 4 kHz to 30 kHz Direct mounting to heatsink Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS Short circuit ruggedness REMARKS Product reliability results valid for TJ = 150 °C Recommended operation temperature Top = 150 °C      ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS IGBT Collector to emitter voltage Collector current Pulsed collector current Clamped inductive load current Gate to emitter voltage Maximum power dissipation SERIES DIODE VCES IC ICM ILM (1) VGE PD TC = 80 °C TC = 25 °C...