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VS-GT80DA120U IGBT Datasheet PDF

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Part Number VS-GT80DA120U
Description IGBT
Feature www.
vishay.
com VS-GT80DA120U Vishay Sem iconductors Insulated Gate Bipolar Tra nsistor (Trench IGBT), 80 A SOT-227 P RIMARY CHARACTERISTICS VCES 1200 V I C DC VCE(on) typical at 80 A, 25 °C 8 0 A at 104 °C 2.
0 V Speed 8 kHz to 3 0 kHz Package SOT-227 Circuit config uration Single switch with AP diode F EATURES
• Trench IGBT technology
• Positive VCE(on) temperature coefficien t
• Square RBSOA
• 10 μs short cir cuit capability
• HEXFRED® low Qrr, low switching energy
• TJ maximum = 1 50 °C
• Fully isolated package
• V ery low internal inductance ( 5 nH t ypical)
• Industry standard outline .
Manufacture Vishay
Datasheet
Download VS-GT80DA120U Datasheet

VS-GT80DA120U

 

 

 


 

 

 

Part Number VS-GT80DA120U
Description IGBT
Feature www.
vishay.
com VS-GT80DA120U Vishay Sem iconductors Insulated Gate Bipolar Tra nsistor (Trench IGBT), 80 A SOT-227 P RIMARY CHARACTERISTICS VCES 1200 V I C DC VCE(on) typical at 80 A, 25 °C 8 0 A at 104 °C 2.
0 V Speed 8 kHz to 3 0 kHz Package SOT-227 Circuit config uration Single switch with AP diode F EATURES
• Trench IGBT technology
• Positive VCE(on) temperature coefficien t
• Square RBSOA
• 10 μs short cir cuit capability
• HEXFRED® low Qrr, low switching energy
• TJ maximum = 1 50 °C
• Fully isolated package
• V ery low internal inductance ( 5 nH t ypical)
• Industry standard outline .
Manufacture Vishay
Datasheet
Download VS-GT80DA120U Datasheet

VS-GT80DA120U

 

 

 

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