Thyristor/Thyristor. VS-VSKH26-04 Datasheet

VS-VSKH26-04 Datasheet PDF


VS-VSKH26-04
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
ADD-A-PAK
PRIMARY CHARACTERISTICS
IT(AV) or IF(AV)
27 A
Type
Modules - thyristor, standard
Package
AAP Gen 7 (TO-240AA)
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV) or IF(AV)
IO(RMS)
ITSM,
IFSM
85 °C
As AC switch
50 Hz
60 Hz
50 Hz
I2t
60 Hz
I2t
VRRM
TStg
TJ
Range
VALUES
27
60
400
420
800
730
8000
400 to 1600
-40 to +125
-40 to +125
UNITS
A
kA2s
kA2s
V
°C
°C
Revision: 26-Jul-2018
1
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part VS-VSKH26-04
Description Thyristor/Diode and Thyristor/Thyristor
Feature VS-VSKH26-04; VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series www.vishay.com Vishay Semiconductors AA.
Manufacture Vishay
Datasheet
Download VS-VSKH26-04 Datasheet


VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series w VS-VSKH26-04 Datasheet





VS-VSKH26-04
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
04
06
08
VS-VSK.26
10
12
14
16
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
IT(AV)
IF(AV)
TEST CONDITIONS
180° conduction, half sine wave,
TC = 85 °C
VALUES
27
Maximum continuous RMS on-state current,
as AC switch
IO(RMS)
or
I(RMS)
I(RMS)
60
Maximum peak, one-cycle non-repetitive
ITSM
or
on-state or forward current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t (1)
Maximum value or threshold voltage
VT(TO) (2)
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1) I2t for time tx = I2t x tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x x IAV < I < x IAV
(4) I > x IAV
rt (2)
VTM
VFM
dI/dt
IH
IL
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
Initial TJ = TJ maximum
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
Low level (3)
High level (4)
TJ = TJ maximum
ITM = x IT(AV)
IFM = x IF(AV)
TJ = 25 °C
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
400
420
335
350
800
730
560
510
8000
0.86
1.09
9.58
7.31
1.65
150
200
400
UNITS
A
A2s
A2s
V
m
V
A/μs
mA
Revision: 26-Jul-2018
2
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-VSKH26-04
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
PGM
PG(AV)
IGM
-VGM
VGT
IGT
VGD
IGD
TEST CONDITIONS
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
UNITS
W
A
V
mA
V
mA
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
SYMBOL
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM
VALUES
15
3000 (1 min)
3600 (1 s)
1000
UNITS
mA
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating and storage
temperature range
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS Mounting surface flat, smooth and greased
VALUES
-40 to +125
UNITS
°C
0.76
°C/W
0.1
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the
4
torque should be rechecked after a period of
Nm
3 hours to allow for the spread of the compound.
3
Approximate weight
Case style
JEDEC®
75
g
2.7
oz.
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
VSK.26..
0.212 0.258 0.330 0.466
0.72
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
0.166
0.276
0.357
0.482
0.726
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
°C/W
Revision: 26-Jul-2018
3
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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