VS3622DE

Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 V 10 mΩ 14 mΩ 35 A PDFN3333 Part ID VS3622DE Package Type PDFN3333 Marking 3622DE Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TC =25°C TSTG Storage temperature range Thermal Characteristics Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Rati...