VS3640DS

VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 30 16 24 9 SOP8 V mΩ mΩ A Part ID VS3640DS Package Type SOP8 Marking 3640DS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C MSL TSTG Storage temperature range Thermal Characteristics Symbol Parameter RθJL Rθ JA Thermal Resistance-Junction to Lead Thermal Resistance-Junction to Ambient Rating 30 2.3 9 5.7 36 9 2 ±20 Level 3 -55 to 1...