MOSFET. VS3640DS Datasheet

VS3640DS Datasheet PDF

Part VS3640DS
Description Dual N-Channel Advanced Power MOSFET
Feature VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel,5V Logic Level Contr.
Manufacture Vanguard Semiconductor
Datasheet
Download VS3640DS Datasheet




VS3640DS
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Features
Dual N-Channel5V Logic Level Control
Enhancement mode
Fast Switching
High Effective
Pb-free lead plating; RoHS compliant; Halogen-Free
V DS
R @DS(on),TYP VGS=10 V
R @DS(on),TYP VGS=4.5 V
ID
30
16
24
9
SOP8
V
m
m
A
Part ID
VS3640DS
Package Type
SOP8
Marking
3640DS
Tape and reel
information
3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage
Diode continuous forward current
ID Continuous drain current @VGS=10V
IDM
EAS
PD
VGS
Pulse drain current tested
Avalanche energy, single pulsed
Maximum power dissipation
Gate-Source voltage
TA =25°C
TA =25°C
TA =100°C
TA =25°C
TA =25°C
MSL
TSTG Storage temperature range
Thermal Characteristics
Symbol
Parameter
RθJL
Rθ JA
Thermal Resistance-Junction to Lead
Thermal Resistance-Junction to Ambient
Rating
30
2.3
9
5.7
36
9
2
±20
Level 3
-55 to 150
Typical
40
62.5
Unit
V
A
A
A
A
mJ
W
V
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com



VS3640DS
Typical Electrical Characteristics
VS3640DS
30V/9A Dual N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V, ID=250μA
VDS=30V,VGS=0V
VDS=30V,VGS=0V
30
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
VGS(TH) Gate Threshold Voltage
VDS=VGS,ID=250μA
1
1.9
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=8A
-- 16
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=4A -- 24
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
±100
2.5
19
29
nA
V
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate Resistance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=15V,VGS=0V,
f=1MHz
--
--
--
455 --
75 --
60 --
f=1MHz
-- 3.3 --
VDS=15V,ID=8A,
VGS=10V
-- 11 --
-- 3 --
-- 4 --
pF
pF
pF
Ω
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=15V,
ID=8A,
RG=3Ω,
VGS=10V
-- 7
-- 10
-- 22
-- 7
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
--
--
--
--
nS
nS
nS
nS
VSD Forward on voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=8A,VGS=0V
Tj=25,Isd=8A,
VGS=0V
di/dt=500A/μs
-- 0.9 1.2 V
-- 9.5 --
nS
11.8 nC
NOTE:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value
Pulse width ≤ 300μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev B – APR, 2018
www.vgsemi.com


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