VS4604AT-A

Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS4604AT-A 40V/150A N-Channel Advanced Power MOSFET V DS 40 V R @ DS(on),TYP VGS=10 V 3.2 mΩ R @ DS(on),TYP VGS=4.5V 4.0 mΩ ID 150 A TO-220AB Part ID VS4604AT-A Package Type TO-220AB Marking 4604AT Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS ID IDM EAS Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation PDSM Maximum power dissipation ③ TC =25°C TC =100°C TA=25°C TA=70°C TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Copyright Vanguard Semiconductor Co., Ltd Rev A – AUG, 2019 Rating 40 ±20 150 150 106 600 196 115 58 2 1.3 -55 to 175 Unit V V A A A A mJ W W W W °C Typical 1.3 62.5 Unit °C/W °C/W www.vgsemi.com Typical Characteristics VS4604AT-A 40V/150A N-Channel Advanced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μ...