www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectif...
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
High-
Voltage Trench MOS Barrier Schottky Rectifier
FEATURES Trench MOS Schottky technology
TMBS®
Low forward
voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-204AL (DO-41)
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition
2.0 A 200 V 40 A 0.65 V 150 °C
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max.
MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse
voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
Voltage rate of change (rated VR) Operating junction and storage temperature range Note
(1) (1)
SYMBOL VRRM IF(AV) IFSM dV/dt TJ, TSTG
VSB2200S 200 2.0 40 10 000 - 40 to + 150
UNIT V A A V/µs °C
Units mounted on PCB with 2 ...