VSMF3710

End of Life July-2021 - Alternative Device: VSMY3890X01 www.vishay.com VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero 948553 DESCRIPTION VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). FEATURES Package type: surface-mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 60° Low forward voltage Suitable for high pulse current operation High modulation band width: fc = 12 MHz Good spectral matching with Si photodetectors Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS High speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT VSMF3710 Ie (mW/sr) 10 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE VSMF3710-GS08 VSMF3710-GS18 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel ϕ (°) ± 60 λp (nm) 890 tr (ns) 30 REMARKS MOQ: 7500 pcs, 1500 pcs/reel MOQ: 8000 pcs, 8000 pcs/reel PACKAGE FORM PLCC-2 PLCC-2 Rev. 2....