VSP003N06MS-G

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP003N06MS-G 60V/125A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 60 V 2.5 mΩ 4.3 mΩ 125 A PDFN5x6 Part ID VSP003N06MS-G Package Type PDFN5x6 Marking 003N06M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient TC =25°C TC =25°C TC =100°C TC =25°C TA=25°C TA=70°C TC =25°C TA=25°C Rating 60 ±20 125 125 79 500 31 24 100 69 4.2 -55 to 150 Typical 1.8 30 Unit V V A A A A A A mJ W W °C Unit °C/W °C/W Copyright Vanguard Semiconductor Co., Ltd Rev A – DEC, 2019 www.vgsemi.com Electrical Characteristics Symbol Parameter VSP003N06MS-G 60V/125A N-Channel Advanced Power MOSFET Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown ...