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VT2080C

Vishay

Dual Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Recti...


Vishay

VT2080C

File Download Download VT2080C Datasheet


Description
www.DataSheet.co.kr New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified 2 VT2080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT2080C PIN 1 PIN 3 2 3 1 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition PIN 2 K TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 80 V 100 A 0.60 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV...




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