DatasheetsPDF.com

VT3080S Datasheet

Part Number VT3080S
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet VT3080S DatasheetVT3080S Datasheet (PDF)

www.DataSheet.co.kr New Product VT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT3080S PIN 1 PIN 2 CASE 3 1 VIT3080S PIN 1 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to W.

  VT3080S   VT3080S






Part Number VT3080S-E3
Manufacturers Vishay
Logo Vishay
Description Trench MOS Barrier Schottky Rectifier
Datasheet VT3080S DatasheetVT3080S-E3 Datasheet (PDF)

VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080S PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB packag.

  VT3080S   VT3080S







Part Number VT3080C-E3
Manufacturers Vishay
Logo Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet VT3080S DatasheetVT3080C-E3 Datasheet (PDF)

VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT3080C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB p.

  VT3080S   VT3080S







Part Number VT3080C
Manufacturers Vishay
Logo Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet VT3080S DatasheetVT3080C Datasheet (PDF)

www.DataSheet.co.kr New Product VT3080C, VIT3080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT3080C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT3080C PIN 1 PIN 3 2 3 1 • Compliant to RoHS Directive 2002/95/EC and i.

  VT3080S   VT3080S







Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product VT3080S, VIT3080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified 2 VT3080S PIN 1 PIN 2 CASE 3 1 VIT3080S PIN 1 2 3 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition PIN 2 K PIN 3 PIN 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single h.


2012-02-07 : C3D10170H    SKY67002-396LF    SKY67003-396LF    SC284    MAX17598    MAX17599    PS25101    C3D04065A    C3D06065A    C3D08065A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)