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VT4060C

Vishay

Dual Trench MOS Barrier Schottky Rectifier

www.DataSheet.co.kr New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Recti...


Vishay

VT4060C

File Download Download VT4060C Datasheet


Description
www.DataSheet.co.kr New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® TO-220AB K TO-262AA FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 2 VT4060C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT4060C PIN 1 PIN 3 2 3 1 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 60 V 240 A 0.48 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt TJ, TSTG SYMBOL VRRM VT4060C 60 40 A 20 240 10 000 - 40 to + 150 A V/μs °C VIT4060C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (r...




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