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Manufacture Part Number Description PDF
IXYS
IXYS
W1185LC300 Rectifier Diode
Date:- 4th March, 2014 Data Sheet Issue:- 3 Rectifier Diode Types W1185LC300 to W1185LC450 Previous Type No.: SW38-45CXC515 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMI
W1185LC300 pdf
IXYS
IXYS
W1185LC380 Rectifier Diode
Date:- 4th March, 2014 Data Sheet Issue:- 3 Rectifier Diode Types W1185LC300 to W1185LC450 Previous Type No.: SW38-45CXC515 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMI
W1185LC380 pdf
IXYS
IXYS
W1185LC450 Rectifier Diode
Date:- 4th March, 2014 Data Sheet Issue:- 3 Rectifier Diode Types W1185LC300 to W1185LC450 Previous Type No.: SW38-45CXC515 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMI
W1185LC450 pdf
STMicroelectronics
STMicroelectronics
W11NB80 STW11NB80
® STW11NB80 N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET TYPE STW 11NB80 s s s s s s V DSS 800 V R DS(on) < 0.8 Ω ID 11 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINS
W11NB80 pdf
STMicroelectronics
STMicroelectronics
W11NK100Z STW11NK100Z
STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY
W11NK100Z pdf
STMicroelectronics
STMicroelectronics
W11NK90Z STW11NK90Z
STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW11NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.98Ω ID 9.2A Pw 200W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low
W11NK90Z pdf
STMicroelectronics
STMicroelectronics
W11NM80 STW11NM80
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14
W11NM80 pdf




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