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W15NK90Z Datasheet

Part Number W15NK90Z
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet W15NK90Z DatasheetW15NK90Z Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 15 9.5 60 PD Total Dissipation 350 .

  W15NK90Z   W15NK90Z






Part Number W15NK90Z
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description STW15NK90Z
Datasheet W15NK90Z DatasheetW15NK90Z Datasheet (PDF)

w w a D . w S a t e e h U 4 t m o .c STW15NK90Z N-CHANNEL 900V - 0.40Ω - 15A TO-247 Zener-Protected SuperMESH™ MOSFET TYPE VDSS 900 V RDS(on) < 0.55 Ω ID 15 A Pw 350 W STW15NK90Z s s s s s s TYPICAL RDS(on) = 0.40 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased P.

  W15NK90Z   W15NK90Z







N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 15 9.5 60 PD Total Dissipation 350 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.7 UNIT ℃/W W15NK90Z isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor W15NK90Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1.0mA 900 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.15mA 3.0 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=7.5A 400 550 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 900V; VGS= 0V;@Tc=25℃ VDS= 900V; VGS= 0V;Tc=125℃ ISD=15A, VGS = 0 V ±0.1 μA 1 50 μA 1.6 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contain.


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