Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical ...
Wisdom Semiconductor
WFD/U2N60
N-Channel
MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● ●
{
3. Source
General Description
This Power
MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D-PAK, I-PAK
2
1 3 1 2 3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS Drain to Source
Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source
Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 1.8 1.1 6.0
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
120 4.4 4.5 44 0.35 - 55 ~ 150 300
www.DataSheet4U.comE
AS
EAR dv/dt PD TSTG, TJ TL
Thermal Characteristics
Symbol
RθJC RθJA RθJA
Parameter
Thermal Resistance, Junction-to-Case Therma...