WFW24N50W

Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFW24N50W Silicon N-Channel MOSFET General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature (Note1) (Note2) (Note1) (Note3) Value 500 24 15.2 96 ±30 1100 29 4.5 290 2.33 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Units Min Typ Max - - 0.43 ℃/W - 0.24 - ℃/W - - 40 ℃/W Rev.A Aug.2010 Copyright@Winsemi Microelectroni...