WNB087C5APPS12
Hyperfast power diode - Bare die
Rev.01 - 13 December 2018
Product data sheet
1. General description
Hy...
WNB087C5APPS12
Hyperfast power diode - Bare die
Rev.01 - 13 December 2018
Product data sheet
1. General description
Hyperfast power diode (Bare die after sawn).
2. Features and benefits
Low Forward
Voltage Drop Low leakage current Fast reverse recovery Bare die
3. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VRRM*
repetitive peak reverse
voltage
IF(AV)**
average forward current δ = 0.5; square-wave pulse
Static characteristics
VF** forward
voltage
IF = 5 A; Tj = 25 °C
Dynamic characteristics
trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C
Min Typ Max Unit - - 1200 V - - 5A
- 2.4 3.2 V
- 36 - ns
4. Ordering information
Table 2. Ordering information
Type number
Package
Name
WNB087C5APPS12 Wafer
Description Bare die on wafer
Version Die
WeEn Semiconductors
WNB087C5APPS12
Hyperfast power diode - Bare die
5. Limiting values
Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM*
repetitive peak reverse
voltage
VRWM*
crest working reverse
voltage
VR* reverse
voltage
DC
IF(AV)**
average forward current
δ = 0.5; square-wave pulse
IFRM**
repetitive peak forward current δ = 0.5; tp = 25 μs; square-wave pulse
IFSM**
non-repetitive peak forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
Tstg**
storage temperature
Tj** junction temperature
Min...