WNB111V5APTS

WNB111V5APTS Ultrafast power diode - Bare die Rev.01 - 18 December 2018 1. General description Ultrafast power diode (Bare die after sawn). 2. Features and benefits Low Forward Voltage Drop Low leakage current Fast reverse recovery Bare die 3. Quick reference data Table 1. Quick reference data Symbol VRRM* Parameter repetitive peak reverse voltage Conditions IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage IF = 15 A; Tj = 25 °C Dynamic characteristics trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C 4. Ordering information Table 2. Ordering information Type number Package Name WNB111V5APTS Wafer Description Bare die on wafer Product data sheet Min Typ Max Unit - - 600 V - - 15 A - 1.4 1.8 V - 28 60 ns Version Die WeEn Semiconductors WNB111V5APTS Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive peak reverse voltage VRWM* crest working reverse voltage VR* reverse voltage DC IF(AV)** average forward current δ = 0.5; square-wave pulse IFRM** repetitive peak forward current δ = 0.5; tp = 25 μs; square-wave pulse IFSM** non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse Tstg** storage temperature Tj** junction tem...