diode. WNB111V5APTS Datasheet

WNB111V5APTS Datasheet PDF

Part WNB111V5APTS
Description Ultrafast power diode
Feature WNB111V5APTS Ultrafast power diode - Bare die Rev.01 - 18 December 2018 1. General description Ultr.
Manufacture WeEn
Datasheet
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WNB111V5APTS
WNB111V5APTS
Ultrafast power diode - Bare die
Rev.01 - 18 December 2018
1. General description
Ultrafast power diode (Bare die after sawn).
2. Features and benefits
Low Forward Voltage Drop
Low leakage current
Fast reverse recovery
Bare die
3. Quick reference data
Table 1. Quick reference data
Symbol
VRRM*
Parameter
repetitive peak reverse
voltage
Conditions
IF(AV)** average forward current δ = 0.5; square-wave pulse
Static characteristics
VF**
forward voltage
IF = 15 A; Tj = 25 °C
Dynamic characteristics
trr**
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C
4. Ordering information
Table 2. Ordering information
Type number
Package
Name
WNB111V5APTS
Wafer
Description
Bare die on wafer
Product data sheet
Min Typ Max Unit
-
-
600 V
-
-
15 A
-
1.4 1.8 V
-
28
60
ns
Version
Die



WNB111V5APTS
WeEn Semiconductors
WNB111V5APTS
Ultrafast power diode - Bare die
5. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM*
repetitive peak reverse voltage
VRWM*
crest working reverse voltage
VR*
reverse voltage
DC
IF(AV)**
average forward current
δ = 0.5; square-wave pulse
IFRM**
repetitive peak forward current δ = 0.5; tp = 25 μs; square-wave pulse
IFSM**
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse
Tstg**
storage temperature
Tj**
junction temperature
Min
Max Unit
-
600 V
-
600 V
-
600 V
-
15 A
-
30 A
-
180 A
-
200 A
-65
175 °C
175 °C
WNB111V5APTS
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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