WNB160V5SPTS
Ultrafast power diode - Bare die
3 April 2018
1. General description
Ultrafast power diode bare die.
2. F...
WNB160V5SPTS
Ultrafast power diode - Bare die
3 April 2018
1. General description
Ultrafast power diode bare die.
2. Features and benefits
Fast switching Low forward
voltage drop Soft recovery characteristic Bare die
3. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM*
repetitive peak reverse
voltage
IF(AV)**
average forward current
δ = 0.5 ; square-wave pulse
Static characteristics
VF** forward
voltage Dynamic characteristics
IF = 5 A; Tj = 25 °C IF = 30 A; Tj = 25 °C
trr** reverse recovery time IF = 1A; dIF/dt = 50 A/µs; VR = 30 V; Tj = 25 °C;
4. Ordering information
Table 2. Ordering information
Type number
Package
Name
WNB160V5SPTS
Wafer
Description Bare die on wafer
Product data sheet
Min Typ Max Unit - - 600 V - - 30 A 0.8 1.15 1.28 V - 1.2 1.3 V - - 75 ns
Version Die
WeEn Semiconductors
WNB160V5SPTS
Ultrafast power diode - Bare die
5. Limiting values
Table 2. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM*
repetitive peak reverse
voltage
VRWM*
crest working reverse
voltage
VR* IF(AV)** IFRM**
reverse
voltage
average forward current
repetitive peak forward current
DC δ = 0.5 ; square-wave pulse δ = 0.5 ; tp = 25 µs; square-wave pulse
IFSM**
non-repetitive peak forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse
tp = 8.3 ms; Tj(init) = 25 °C; square-wave pulse
Tstg** Tj**
storage temperature junction tempera...
