WNS40H100CG

WNS40H100CG Dual power Schottky diode 23 January 2019 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a TO-262 plastic package. 2. Features and benefits Trench structure High junction temperature up to 150°C High efficiency Low forward voltage drop, negligible switching losses 3. Applications DC to DC converters Freewheeling diode OR-ing diode 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 134 °C; square-wave pulse; per diode; Fig. 1; Fig. 2; Fig. 3 IO(AV) average output current δ = 0.5 ; Tmb ≤ 130 °C; square-wave pulse; both diodes conducting Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; Fig. 6; per diode IF = 10 A; Tj = 125 °C; Fig. 6; per diode IF = 20 A; Tj = 25 °C; Fig. 6; per diode IF = 20 A; Tj = 125 °C; Fig. 6; per diode IR reverse current VR = 100 V; Tj = 25 °C; Fig. 7; Fig. 8; per diode VR = 100 V; Tj = 125 °C; Fig. 7; Fig. 8; per diode Min Typ Max Unit - - 100 V - - 20 A - - 40 A - 0.53 0.59 V - 0.49 0.56 V - 0.64 0.71 V - 0.61 0.68 V - - 50 µA - - 40 mA WeEn Semiconductors WNS40H100CG Dual power Schottky diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb K mounting base; connected to cathode 1 ...