WNSC201200CW

WNSC201200CW Silicon Carbide Diode Rev.02 - 2 July 2019 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free 2. Features and benefits Lead-Free Highly stable switching performance High forward surge capability IFSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IO(AV) limiting average output δ = 0.5 ; Tmb ≤ 129 °C; square-wave pulse; current both diodes conducting; Fig. 1; Fig. 2; Fig. 3; Fig. 4 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage IF = 10 A; Tj = 25 °C; per diode; Fig. 6 IF = 10 A; Tj = 150 °C; per diode; Fig. 6 IF = 10 A; Tj = 175 °C; per diode; Fig. 6 Dynamic characteristics Qr recovered charge IF = 10 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C; per diode; Fig. 8 Values 1200 20 Unit V A 175 Min Typ °C Max Unit - 1.4 1.6 V - 1.85 2.3 V - 2 2.6 V - 24 -...