WP3DPD1C

WP3DPD1C Photodiode DESCRIPTION z Made with PIN silicon phototransistor chips FEATURES z Mechanically and spectrally matched to the infrared emitting LED lamp z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Power Dissipation 150 Operating Temperature -40 to +85 Storage Temperature -40 to +85 Lead Solder Temperature [1] 260°C For 3 Seconds Lead Solder Temperature [2] 260°C For 5 Seconds Notes: 1. 2mm below package base. 2. 5mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018 Units mW °C °C Page 1 / 4 ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C Parameter Symbol Min. Reverse Break down Voltage Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light current V(BR)R ID(R) VOC TR TF IS 33 0.07 Total Capacitance CT - Range of spectr...