Diode. WSB5543W Datasheet

WSB5543W Datasheet PDF


WSB5543W
WSB5543W
Middle Power Schottky Barrier Diode
Features
1.0A Average rectified forward current
Trench MOS Schottky technology
Low forward voltage,low leakage current
Small package SOD-323F
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current(1)
Forward peak surge current(2)
Junction temperature
Operating temperature
Storage temperature
WSB5543W
Http://www.sh-willsemi.com
SOD-323F
Circuit
Symbol
VRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
1.0
7
-55 ~ 150
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage(3)
Reverse current
Junction capacitance
Thermal resistance(4)
VF
IR
CJ
RθJSP
IF=1.0A
VR=VR
VR=1V, F=1MHz
Junction to Soldering point
Min.
-
-
-
-
Typ.
0.48
8
80
-
Max.
0.57
50
-
60
Unit
V
uA
pF
K/W
Order Informations
Device
Package
WSB5543W-2/TR
SOD-323F
Note 1: Duty cycle=0.5f=20kHzsquare wave;
Note 2: Pulse Width=8.3ms, Single sine Pulse
Note 3: Single Pulse test tp=380us;
Note 4: Soldering point of cathode tab
Note 5:* = Month code (A~Z); DA = Device code
Will Semiconductor Ltd.
1
Marking
DA* (5)
Shipping
3000/Reel&Tape
Sep, 2014 - Rev. 1.0


Part WSB5543W
Description Schottky Barrier Diode
Feature WSB5543W; WSB5543W Middle Power Schottky Barrier Diode Features  1.0A Average rectified forward current  Tre.
Manufacture WillSEMI
Datasheet
Download WSB5543W Datasheet

WSB5543W Middle Power Schottky Barrier Diode Features  1.0A WSB5543W Datasheet





WSB5543W
Typical characteristics (Ta=25oC, unless otherwise noted)
WSB5543W
1
0.1
125oC
150oC
85oC
0.01
65oC
25oC
0oC
-50oC
1E-3
0.0
0.1 0.2 0.3 0.4
Forward Voltage(V)
0.5
Forward voltage vs. Forward current
10000
1000
100
10
1
125oC
85oC
65oC
25oC
0.1 0oC
0.01
1E-3
10
-50oC
20 30
Reverse Voltage(V)
Reverse current vs. Reverse voltage
40
1.2 1000
100
0.8
Ta=25oC,f=1MHz
10
0.4
1
0.0
0
25 50 75 100 125 150
Tsp(oC)
Current Derating
0.1
0
5 10 15 20
Reverse Voltage(V)
25
Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 Sep, 2014 - Rev. 1.0



WSB5543W
Package outline dimensions
SOD-323F
WSB5543W
Symbol
A
B
C
D
E
F
G
H
Min.
1.15
0.25
1.60
2.38
-
0.08
0.60
-
Dimensions in millimeter
Typ.
1.25
0.30
1.70
2.48
7°
0.13
0.65
7°
Max.
1.35
0.35
1.80
2.58
-
0.18
0.70
-
Will Semiconductor Ltd.
3 Sep, 2014 - Rev. 1.0






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