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X28C513 Datasheet

Part Number X28C513
Manufacturers Renesas
Logo Renesas
Description Byte Alterable EEPROM
Datasheet X28C513 DatasheetX28C513 Datasheet (PDF)

X28C512, X28C513 5V, Byte Alterable EEPROM The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle an.

  X28C513   X28C513






Part Number X28C512
Manufacturers Renesas
Logo Renesas
Description Byte Alterable EEPROM
Datasheet X28C513 DatasheetX28C512 Datasheet (PDF)

X28C512, X28C513 5V, Byte Alterable EEPROM The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle an.

  X28C513   X28C513







Byte Alterable EEPROM

X28C512, X28C513 5V, Byte Alterable EEPROM The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The X28C512, X28C513 feature the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512, X28C513 support a 128-byte page write operation, effectively providing a 39µs/byte write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512, X28C513 also feature DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the X28C512, X28C513 support the software data protection option. DATASHEET FN8106 Rev 2.00 June 7, 2006 Features • Access Time: 90ns • Simple Byte and Page Write - Single 5V supply • No external high voltages or VPP control circuits - Self-timed • No erase before write • No complex programming algorithms • No overerase problem • Low Power CMOS - Active: 50mA - Standby: 500µA • Software Data Protection - Protects data against system level inadvertent writes • High Speed Page Write Capability • Highly Reliable Direct Write™ Cell - Endurance: 100,000 write cycles - Data retention: 100 years - Early end of write detection - DATA polling - Toggle bit polling • Two PLCC and LCC Pinouts - X28C512 • X28C010 EPROM pin compatible - X28C513 • Compatible with.


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