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XB0ASB03A1BR

Torex Semiconductor

Schottky Barrier Diode

500mA, 30V Type Low VF, Actual Power =400mV @500mA Small Package : SOD-323 APPLICATIONS Rectification of compact DC/DC ...


Torex Semiconductor

XB0ASB03A1BR

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Description
500mA, 30V Type Low VF, Actual Power =400mV @500mA Small Package : SOD-323 APPLICATIONS Rectification of compact DC/DC converter Surge absorption caused by counter force of compact motors Protection against reverse connection of battery GENERAL DESCRIPTION Small package, SOD-323 Suitable for compact, low profile circuit designs Low Forward Voltage (@IF=500mA, Actual VF=400mV) Short reverse recovery time (Actual trr=10ns) PACKAGING INFORMATION 0.3± 0.15 1.25 ± 0.15 0.11 +0.03 -0.02 2 0-0.1 2 MARKING RULE 0 (Product Number) Assembly Lot Number . 2 1 0.9± 0.15 1.75 ± 0.15 . 1 : Cathode 2 : Anode Unit : mm SOD-323 www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive Peak Reverse Voltage Reverse Voltage (DC) Forward Current (Average) Non Continuous Forward Surge Current*1 Junction Temperature Storage Temperature Range *1: Non continuous high amplitude 60Hz half-sine wave. SYMBOL VRM VR IF(AV) IFSM Tj Tstg RATINGS 30 20 0.5 5 125 -55~+150 1 Ta = 25 UNIT V V A A ELECTRICAL CHARACTERISTICS PARAMETER Forward Voltage (DC) Reverse Current (DC) Inter-Terminal Capacity Reverse Recovery Time *2 SYMBOL VF1 VF2 IR Ct trr TEST CONDITIONS IF=100mA IF=500mA VR=20V VR=10V, f=1MHz IF=IR=10mA, irr=1mA 12 10 LIMITS MIN. TYP. 0.4 MAX. 0.36 0.46 100 2.5± 0.15 1 Ta=25 UNITS V V A pF ns Note) 1. This product has a weakness for an electroshock such as electrostatic. Please be careful of an electrification to human body and an electric leakage in the application. 2. *2 : ...




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