XB1004

16.0-30.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1004 Chip Device Layout Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and www.DataSheet4U.com gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Parameter Frequency Range (f ) Input Return Loss (S11) 3 Output Return Loss (S22) 3 Small Signal Gain (S21) 3 Gain Flatness (∆S21) Reverse Isolation (S12) 3 Noise Figure (NF) 4 Output Power for 1 dB Compression (P1dB) 1,2,3 Output Third Order Intercept Point (OIP3) 1,2,3 Saturated Output Power (Psat) 1,2,3 Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1c,2c) Supply Current (Id) (Vd=4.0V, Vg=-0.3V Typical) General Description Absolute Maximum Ratings ...