XB1007-BD

4.0-11.0 GHz GaAs MMIC Buffer Amplifier March 2007 - Rev 06-Mar-07 B1007-BD Chip Device Layout Features Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for www.DataSheet4U.com Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 180 mA +0.3 VDC +20.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Inp...