XBRP400100CTL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by XBRP400100CTL/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP II™ Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Highly Stable Oxide Passivated Junction Guardring for Stress Protection Matched Dual Die Construction; May be Paralleled for High Current Output Low Forward Voltage 1 Mechanical Characteristics: Case: Epoxy, Molded with Metal Heatsink Base 3 Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Base Plate Torques: See procedure given in the Package Outline Section Top Terminal Torque: 25–40 lb–in max. Shipped 25 units per foam Marking: XBRP400100CTL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Per Leg Per Package Per Package Per Package XBRP400...