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XBS206S17R-G

Torex Semiconductor

Schottky Barrier Diode

XBS206S17R-G Schottky Barrier Diode, 2A, 60V Type ETR1613-002a ■FEATURES Forward Voltage Forward Current Repetitive P...


Torex Semiconductor

XBS206S17R-G

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XBS206S17R-G Schottky Barrier Diode, 2A, 60V Type ETR1613-002a ■FEATURES Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.615V (TYP.) : IF(AVE)=2A : VRM=60V ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 60 V Reverse Voltage (DC) VR 60 V Forward Current (Average) IF(AVE) 2 A Non Continuous Forward Surge Current*1 IFSM 45 Junction Temperature Tj 125 Storage Temperature Range Tstg -55~+150 *1: Non continuous high amplitude 60Hz half-sine wave. A ℃ ℃ ■APPLICATIONS ●Rectification ●Protection against reverse connection of battery ■PACKAGING INFORMATION ■MARKING RULE Cathode Bar ①②③④⑤⑥: 206S17(Product Number) ⑦⑧ : Assembly Lot Number ■PRODUCT NAME PRODUCT NAME DEVICE ORIENTATION XBS206S17R-G SMA (Halogen & Antimony free) XBS206S17R SMA * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS PARAMETER Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time*2 *2:trr measurement circuit Bias Pulse Generatrix SYMBOL TEST CONDITIONS VF1 IF=200μA VF2 IF=2A IR1 VR=30V IR2 VR=60V Ct VR=1V , f=1MHz trr IF=IR=10mA , irr=1mA Device Under test Oscilloscope SMA Unit: mm MIN. - LIMITS TYP. 0.15 0.615 2.5 10 120 35 Ta=25℃ MAX. - 0.665 - 300 - UNIT V V μA μA pF ns 1/3 XBS206S17R-G ■TYPICAL PERFORMANCE CH...




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